Fabrication and Characterization of Poly-3-hexylthiophene based Field Effect Transistors: Performance Improvement by Morphology and Doping Control

Abstract

In this study, OFETs were fabricated by using P3HT as the host active channel semiconductor material that was synthesized in the laboratory at ambient conditions. It is well known that the performance mainly the mobility of an OFET is strongly dependent on its active channel material, thin-film morphology and orientation of the molecules in the channel film. Therefore, here, we tried to improve the performance of the P3HT FET simply by changing the morphology of P3HT as P3HT-nanofibers, P3HT-naocomposite by incorporation of a few graphene sheets, and also by doping of P3HT with a very good electron acceptor 7,7,8,8 tetracyanoquinodimethane (TCNQ). It was found that the OFET performance improved significantly in each case due to improved transport property of the device channel film.