Time Dependent Analysis of an Ion-Implanted GaAs OPFET

Abstract

A time-dependent analysis of the electrical charac- teristics of an ion implanted GaAs optical field effect transistor (OPFET) has been carried out. Both the cases of light turning on and off at a reference time t = 0 have been considered. The photovoltaic effect across the Schottky junction and the depletion width modulation in the active layer have been taken into account. The threshold voltage, channel charge, channel conductance, drain-source current, transconductance, and gate-source capacitance of the device under light turning on and off conditions have been evaluated. When light is turned on, all the parameters increase with time before reaching the steady-state value and when light is turned off, these parameters decrease with time and reach their respective values corresponding to dark condition. The time under on condition is less than that under off condition. © 1994 IEEE