Ultralow Voltage Floating Film Transferred DPP-DTT-Based Near-Infrared Phototransistor
| dc.contributor.author | Kumar P.; Mishra V.N.; Prakash R. | |
| dc.date.accessioned | 2025-05-23T11:13:29Z | |
| dc.description.abstract | In this article, we report water-processed polyvinyl alcohol (PVA) dielectric-based near-infrared (NIR) organic phototransistor (OPT) with operating voltage under -1 V. For solution processing of organic semiconductor (OSC), we selected floating film transfer method (FTM) because of its large-area suitability and low-cost processing. The self-assembled film of poly[2,5-(2-octyldodecyl)-3, 6-diketopyrrolopyrrole-alt-5,5-(2,5di(thien-2-yl)thieno [3,2-b]-thiophene)] (DPP-DTT) semiconducting layer was lifted from the surface of the water as liquid substrate. Thus, this NIR OPT has been fabricated by combining the advantages of using water-processed PVA dielectric and FTM-transferred DPP-DTT OSC layer from water as a substrate. The DPP-DTT NIR OPT shows a power sensitivity (P) of 4.56 × 102 (at 1.2 mW/cm2), a responsivity of 7.72 A/W, an external quantum efficiency (EQE) of 1183.84%, and a detectivity of ∼ 1.097 ×,1012 Jones under -1 -V operation at the incident radiation of 850 nm (0.067 mW/cm2). The maximum processing temperature in the whole experiment was not more than 100 °C. Analysis regarding threshold voltage shift and mobility on illumination has also been carried out, which shows a maximum threshold voltage shift of 250 mV and 346% change in mobility at 1.2 mW/cm2 (850 nm). A mechanism for performance enhancement using the trap charges (hydroxyl group) on the noncross-linked PVA dielectric has also been discussed. © 1963-2012 IEEE. | |
| dc.identifier.doi | https://doi.org/10.1109/TED.2024.3371947 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/5893 | |
| dc.relation.ispartofseries | IEEE Transactions on Electron Devices | |
| dc.title | Ultralow Voltage Floating Film Transferred DPP-DTT-Based Near-Infrared Phototransistor |