Sensing mechanism in tin oxide-based thick-film gas sensors

Abstract

A model has been developed for the sensing mechanism of metal oxide-based thick-film gas sensors. The model explains the behaviour of the sensor conductance as a function of the concentration of test gas and the operating temperature of the sensor. Using the Schottky-barrier conduction mechanism through grain boundaries, a relationship between the degree of surface coverage θ and the conductance G has been obtained. To relate the conductance with the concentration of the gas, the Freundlich adsorption isotherm for gases and vapours on a solid surface has been used. The isotherm relates the degree of surface coverage θ with the partial pressure of the gas (concentration). By eliminating θ, an expression relating the variation of G with concentration has been obtained. To study the validity of the model, a thick-film Pd-doped tin oxide gas sensor has been fabricated and tested with propanol (C3H7OH). The variation in the conductance with changes in concentration and temperature has been observed. The observed data show an excellent fit with the developed model. Using the experimental data, the constants of the theoretical equation have also been evaluated. © 1994.