Frequency tunable SIW cavity resonator integrated with Schottky diode

Abstract

A Frequency Tunable Substrate Integrated Waveguide (SIW) Cavity Resonator Integrated with Schottky Diode has been reported in this paper. Frequency tunability between 8.5 GHz to 11.9 GHz (X band) has been achieved by varying the biasing voltage of the Schottky diode. Further we have also presented a physical model describing the phenomenon by the help of an equivalent circuit. The design of the SIW is done by the HFSS based on finite Element Method (FEM) and the integration of Schottky diode in the structure is done by ADS based on Method of Moment (MoM). Frequency tunability by integrating schottky diode in the SIW structure has shown better improvement in voltage requirement, temperature range and conversion efficiency. The structure implementation is quite simple and thus will be appropriate in the application of low cost microwave and millimeter wave devices. © 2019 URSI. All rights reserved.