Synthesis, Characterization, and Properties of TMDs Nanostructures

Abstract

In the last two decades, vibrant worldwide research on two-dimensional (2D) materials triggered significant attention owing to their outstanding electrical, mechanical, and optical properties. Among 2D materials, transition metal dichalcogenides (TMDs) such as MoS2, MoSe2, and WS2 are a large family of layered materials that exhibits peculiar and fascinating properties leading to unlimited potential in electronics, optoelectronics, and energy storage applications. The characteristics and properties of these TMDs determine their utilization in energy generation and storage applications. This chapter intends to discuss the various synthesis routes, mainly categorized into two types of approaches, namely top-down and bottom-up. Furthermore, the characterization techniques along with some of the key properties of TMD nanostructures are also discussed. © 2024 World Scientific Publishing Company.