Device Reliability and Effect of Temperature on Memristors: Nanostructured VO

Abstract

This paper demonstrates the fabrication, testing, reliability and impact of temperature on the nanostructured vanadium pentoxide (V2O5) based memristor devices. The scalability, repeatability and reliability tests were performed across the devices from 2 inch processed wafers. The reliability test of the memristor devices was conducted by performing real time testing with varying temperature from 293 K to 383 K. The performance metric of the memristor devices were enhanced with the increase in the device testing temperature. The current switching ratio 300 was observed at 383 K, which is ∼ 250 times higher than the room temperature (RT). In addition, these memristor devices offer highly repeatable and reliable results at optimum temperature of 383 K. These test results have proved that the demonstrated wafer scale synthesized V2O5 based memristors can be used for high temperature applications. © 2001-2011 IEEE.