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Optoelectronic Charge Coupled Device (OECCD) Using InP MIS Capacitor Array
| dc.contributor.author | Pal B.B.; Nelson S.S. | |
| dc.date.accessioned | 2025-05-24T09:55:35Z | |
| dc.description.abstract | InP MIS structures are of recent interest for high-speed application. We propose here an optoelectronic charge coupled device (OECCD) which is directly compatible with an incident optical signal. The nonlinear partial differential equation consisting of optical generation and recombination is solved in one dimension using the Crank-Nicolson finite difference scheme. The parameter estimated is the charge transfer inefficiency considering InP MIS capacitor arrays and compared to Si OECCD. © 1993 IEEE | |
| dc.identifier.doi | https://doi.org/10.1109/16.277350 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/20024 | |
| dc.relation.ispartofseries | IEEE Transactions on Electron Devices | |
| dc.title | Optoelectronic Charge Coupled Device (OECCD) Using InP MIS Capacitor Array |