Computer Simulation of Ion‐Implanted DAR Impatt around 94 GHz under Steady State Condition

Abstract

A double iteration technique is applied to obtain the field and current density profiles of an ionimplanted double avalanche region (DAR) Impatt diode suitable for operation around 94 GHz under steady state condition. Computations are carried out for Si, InP‐ and GaAs DAR Impatt. It is found that using ion, implanted structures it will be possible to improve the efficiency of the DAR Impatt considerably at millimeter wave frequencies. Copyright © 1986 WILEY‐VCH Verlag GmbH & Co. KGaA