A Proposed All ZnO Based Thin Film Transistor for UV-B Detection

Abstract

This article demonstrates that ZnO can be used both as the insulating dielectric and the channel by appropriately mixing with lithium and indium, respectively. The ion-conducting lithium zinc oxide (Li2ZnO2) as the dielectric and indium zinc oxide (IZO) as the channel used to fabricate thin-film transistors operating in accumulation mode are derived using the solution-processable method. The novelty of the structure is that both dielectric and channel are made up of ZnO, which provide the possibility of least interface trap states with very high capacitive coupling (318 nF/cm2) makes the device more attractive for low power electronics. The fabricated devices exhibit low operational voltage (≤2V) with high carrier mobility. Indium doped-ZnO is a large-bandgap material that can be utilized for narrowband UV-B (310 nm) detection, for narrowband phototherapy to treat certain skin diseases. © 1989-2012 IEEE.