Effect of local oscillator and modulating signal on the performance of an ion-implanted GaAs OPFET

Abstract

Effect of local oscillator and signal modulating frequency on the characteristics of an ion implanted GaAs OPFET have been studied theoretically. The threshold voltage, drain-source current and transconductance have been calculated and discussed as a function of these two frequencies. Further the gain in dB when OPFET is used as an amplifier is also plotted against frequencies and useful bandwidths have been defined for this type of device. The results are interesting and may be useful in communication. © 1999 Taylor & Francis Group, LLC.