Theoretical analysis of an InAs/InAsSb heterojunction photodetector for mid-infrared(MIR) applications

Abstract

In this paper we propose an p-InAs88Sb0.12/n-InAs heterojunction photodetector for application in 3-6 μm wavelength region. The device has been modeled theoretically to examine its performance characteristics for the proposed application. The model takes into account all the major effects that influence the detectivity of the device in the operating wavelength region. It is observed that Auger G-R, tunneling effect and surface recombination at heterointerface adversely affect the performance of the detector. The device can be optimized to provide a high detectivity with a reasonably high value of quantum efficiency at the operating wavelength.