Study and Investigation of DC and RF Performance of TFET on SEL-BOX and Conventional SOI TFET with SiO2/HfO2 Stacked Gate Structure

Abstract

Here, we have reported an n-type SEL-BOX TFET with SiO2/HfO2Stacked Gate Structure. The SEL-BOX structure provides low off-state current and reduces self-heating effect unlike in SOI structure. The metal work function is also chosen such that the reverse tunnelling i.e. tunneling from drain to channel gets restricted due to formation of barrier within the channel region. This is not only result of high on-state current but also very low off-state current, which provides high ION/IOFFratio. Here we have compared analytical modelled surface potential, electric field and drain current with simulated data of ATLAS TCAD tool. © 2019 IEEE.