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Analytical modelling of photo-effects on the S-parameters of GaAs MESFETs
| dc.contributor.author | Murty Neti.V.L.N.; Jit S. | |
| dc.date.accessioned | 2025-05-24T09:57:12Z | |
| dc.description.abstract | A new analytical model for the photo-dependent S-parameters of GaAs MESFETs has been presented in this paper. The photo-dependent expressions for the gate-source capacitance, gate-drain capacitance, drain-source resistance, domain capacitance, and domain resistance have been derived and used to study the optical effects on the S-parameters of the MESFET. © 2005 Wiley Periodicals, Inc. | |
| dc.identifier.doi | https://doi.org/10.1002/mop.21290 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/21859 | |
| dc.relation.ispartofseries | Microwave and Optical Technology Letters | |
| dc.title | Analytical modelling of photo-effects on the S-parameters of GaAs MESFETs |