Performance of a mid-infrared (MIR) SH-LED under high carrier injection

Abstract

In this paper, we present an analytical approach to evaluate the effect of high carrier injection on the performance of a midinfrared (MIR) single heterojunction light emitting diode (SH-LED) based on P+-InAs 0.36Sb0.20P0.44/n0-InAs/n +-InAs material system for operation in 2.4-3.5 μm spectral range at room temperature. The model developed for the purpose takes into account all dominating radiative and non-radiative recombination processes, interfacial recombination and self-absorption in the active layer of the SH-LED structure. The effect of these processes on the quantum efficiency, modulation bandwidth and output power of the SH-LED under high carrier injection have been considered in this model. The output power of the SH-LED has been computed as a function of bias current and it is found to be in good agreement with reported experimental results.