Role of hydrogen in interface states parameters of Ni/n-Si (111) Schottky diodes: (c-v) studies
| dc.contributor.author | Sahay P.P.; Shamsuddin M.; Srivastava R.S. | |
| dc.date.accessioned | 2025-05-24T09:57:39Z | |
| dc.description.abstract | [No abstract available] | |
| dc.identifier.doi | https://doi.org/10.1007/BF00724435 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/22391 | |
| dc.relation.ispartofseries | Journal of Materials Science Letters | |
| dc.title | Role of hydrogen in interface states parameters of Ni/n-Si (111) Schottky diodes: (c-v) studies |