Effect of illumination on Schrodinger wave function in the quantum well of MODFET and related device characteristics

Abstract

The effect of illumination on the Schrodinger's wave function has been studied in the quantum well of an AlGaAs/GaAs MODFET. The method is based on the solution of the Schrodinger's wave equation and Poisson's equation. Partial depletion of the active region of the MODFET has been considered. At the heterojunction interface two different models for the quantum well has been assumed: 1) a triangular potential well and 2) a modified triangular potential well of finite depth. From the knowledge of modified Schrodinger's wave function under illumination we have calculated the sheet concentration, the drain source current and the transfer characteristics. The I-V characteristic is compared with available experimental data at a particular gate-source voltage under illumination.