Computer Analysis of DC Field and Current-Density Profiles of DAR Impatt Diode

dc.contributor.author	Datta D.N.; Pati S.P.; Banerjee J.P.; Pal B.B.; Roy S.K.
dc.date.accessioned	2025-05-24T09:57:23Z
dc.description.abstract	A computer study on the dc field and current-density profiles of a Si n+-p-v-n-p+ double avalanche region (DAR) Impatt has been carried out. With increasing current density the uniform electric field in the central drift region remains almost unaffected due to cancellation of mobile space charge, in case of symmetrically doped structure. Also the avalanche and drift-zone widths and the RF conversion efficiency remain almost unaltered. For asymmetric doping there is a small space-charge effect. Copyright © 1982 by The Institute of Electrical and Electronics Engineers, Inc.
dc.identifier.doi	https://doi.org/10.1109/T-ED.1982.21032
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/22093
dc.relation.ispartofseries	IEEE Transactions on Electron Devices
dc.title	Computer Analysis of DC Field and Current-Density Profiles of DAR Impatt Diode

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