Fabrication and characterization of thin-film heterojunction diodes for smart systems

Abstract

In the present article we report copper (Cu) doped ZnO (p-type) thin-film based heterojunction diodes grown on p/n-Si substrate. Sol-gel spin coating method has been used to deposit the Cu doped ZnO thin films on p/n-type silicon. The p-type nature of the deposited Cu doped ZnO thin films have been confirmed by hot point probe method. The electrical parameters of the as fabricated devices have been gauged from I-V characteristics. The ZnO based devices on Si platform are expected to be deployed in future generation smart systems for UV/gas sensing and photovoltaic applications. © 2017 IEEE.