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Effect of magnetic field on N+ Nn+ GaAs ballistic diode

dc.contributor.authorTiwari S.C.
dc.date.accessioned2025-05-24T09:55:02Z
dc.description.abstractThe AC impedance of a ballistic diode under a transverse magnetic field shows distinct behaviour depending on the cyclotron frequency. An equivalent lumped parameter RLC representation is obtained. © 1985, The Institution of Electrical Engineers. All rights reserved.
dc.identifier.doihttps://doi.org/10.1049/el:19850205
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/19432
dc.relation.ispartofseriesElectronics Letters
dc.titleEffect of magnetic field on N+ Nn+ GaAs ballistic diode

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