Subthreshold Swing Modeling of Gaussian Doped Double-Gate MOSFETs and its Validation Based on TCAD Simulation

Abstract

In this paper mathematical modeling of subthreshold swing (SS) on the basis of surface potential of short-channel Double-Gate (DG) MOSFETs with a Gaussian-like doping profile in the y-dierection of the channel region has been shown. Poisson's equation in 2 diemension co-ordinate system has been answered by applying parabolic approximation method in the completely depleted channel region. With employing notion of effective conduction path, which varying with channel thickness as well as gate oxide thickness of the device to obtain the SS of proposed structure. A good concurrence has been seen between proposed model results and the data obtained from the 2D device simulation tool from Silvaco ATLASTM. © 2020 IEEE.