Electrical and optical characteristics of Pd/ZnO quantum dots based Schottky photodiode on n-Si

Abstract

The article reports fabrication and characterization of low-cost solution-processed ZnO Quantum dots (QDs) Schottky photodiode. The Thin film of ZnO QDs (100nm) was deposited via a sol-gel route on n-Si substrate and annealed at 250°C. The Schottky barrier of 0.63eV is formed between the ZnO QDs and Pd metal deposited using shadow mask technique through e-beam evaporation under very high vacuum of 10-6 tor. We have achieved the rectification ratio of 3.97x103, responsivity of 1.2 A/W and detectivity of 4.33x1012 cmHz1/2W-1 at-3 volts applied bias and under the illuminated power density of 80μW/cm2 at 367 nm. Further, the Schottky junction has also been characterized by ideality factor (2.93) and series resistance (361Ω). © 2016 IEEE.