DC conduction behaviour of niobium doped barium stannate
| dc.contributor.author | Singh P.; Parkash O.; Kumar D. | |
| dc.date.accessioned | 2025-05-24T09:56:26Z | |
| dc.description.abstract | A few compositions with x ≤ 0.100 in the system BaSn1-x NbxO3 have been synthesized by solid-state ceramic method. All these are found to be single phase having cubic structure similar to BaSnO3. Electrical resistivity decreases with increasing niobium concentration up to x = 0.010 and thereafter it increases rapidly for the compositions with x = 0.050 and 0.100. This has been explained in terms of the change in charge compensation behaviour beyond x = 0.010. Measurement of Seebeck coefficient as a function of temperature shows that electrons are the majority charge carriers in compositions with x ≤ 0.010 while compositions with x > 0.010, exhibit p-type conductivity showing that holes are the majority charge carriers. © 2005 Springer Science + Business Media, Inc. | |
| dc.identifier.doi | https://doi.org/10.1007/s10854-005-6593-6 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/21007 | |
| dc.relation.ispartofseries | Journal of Materials Science: Materials in Electronics | |
| dc.title | DC conduction behaviour of niobium doped barium stannate |